SPICE: Practical Device Modeling Review

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(More customer reviews)The book is quite good for experienced spice users. I have used the software off and on for years, but found the information in the book to be an eye opener with regard to new approaches to using the product. The other Kielkowski book is more appropriate for beginning users.

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Here are step-by-step instructions on how to develop those all-important device models for SPICE simulation. Filling a longstanding need for a practical guide, this ready reference leads readers through the model development process with: Ease: Eminently practical in its approach, the book avoids theoretical abstractions--focusing instead on easy-to-implement solutions that working designers so sorely need; Speed: Designers facing critical deadlines can create and simulate their device models immediately, thanks to the Rspice/Rgraph software diskette which accompanies the book; Reliability: All device models described display less than 5% rms error, ensuring the necessary high degree of accuracy.

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Operation and Modeling of the MOS Transistor (Oxford Series in Electrical and Computer Engineering) Review

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(More customer reviews)I don't usually write reviews unless the book is either very poor or very good. This is one of the best books on my shelf. If you want to know the MOS transistor this is the book. Well researched, excellent explanations, excellent appendices. Other authors of technical books should use this as an example of how to write a good technical book.

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Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.New to this edition:* Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner* Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage* Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise* New chapter on substrate nonuniformity and structural effects, discussing transversaland lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability* A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design* Extensively updated bibliography* An accompanying website includes additional details not covered in the text, as well as model computer code

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