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(More customer reviews)The MOS transistor is probably the most studied electronic device of our times. The majority of the integrated circuits fabricated nowadays are based on the MOS transistor (CMOS Integrated Circuits). This device has evolved enormously in the 40 years of its existence, now measuring a few hundred nanometers, thus making the integration of very complex electronic systems possible. This book is written by three scientists who have devoted their life to the study of the MOSFET. And even though the MOS transistor will keep evolving, this book will continue being the basis for a deep study of the device in the years to come, very much like Sze's "Physics of Semiconductor Devices" is now a mandatory reference for anybody in the field of semiconductor devices.
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Analysis and Design of MOSFETs: Modeling, Simulation, andParameter Extraction is the first book devoted entirely to abroad spectrum of analysis and design issues related to thesemiconductor device called metal-oxide semiconductor field-effecttransistor (MOSFET). These issues include MOSFET device physics,modeling, numerical simulation, and parameter extraction. Thediscussion of the application of device simulation to the extractionof MOSFET parameters, such as the threshold voltage, effective channellengths, and series resistances, is of particular interest to allreaders and provides a valuable learning and reference tool forstudents, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, andParameter Extraction, extensively referenced, and containingmore than 180 illustrations, is an innovative and integral new book onMOSFETs design technology.
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